Silicon Carbide Expansive Development Trend

As an emerging strategic leading industry, silicon carbide is an ideal substrate material for high-temperature, high-frequency and high-power semiconductor devices as well as the basic material to develop the third generation of semiconductor industry. According to a France consultancy Yole's report, from 2012 to 2015, the annual increase rate of global silicon carbide market will be no less than 30%, and it will see a dramatic increase after 2015.

In semiconductor material field, silicon (Si) and germanium (Ge) are categorized into the first generation of semiconductor materials. While gallium arsenide (GaAs) and indium phosphide (InP) are the second generation. Wide bandgap semiconductor materials representing by silicon carbide falls to the third generation.

Nowadays, silicon carbide stands at the front edge of global semiconductor industry, the development trend of which is broad and open. Silicon carbide is widely used in LED due to its high heat-conducting rate and good crystal lattice performance. Besides, silicon carbide is an ideal material in electric & electronic equipments. It plays an important role in various fields like new energy vehicles, solar power, locomotive traction and high power electricity transmission.

It is predicted that global silicon carbide mono crystal furnace will total over 3000 sets, and silicon carbide substrate output will be more than 2,000,000 pieces. Meanwhile, the development of silicon carbide can drive relevant industries like mono crystal equipment, external equipment industry, components and modules. The scale is expected to reach hundreds of million dollars.

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