Microsemi talks SiC for high voltages

News comes form Microsemi that its latest silicon carbide (SiC) mosfets are on show at PCIM in Nuremberg, Germany this week.

1200V mosfets are displayed with an intent to offer improved energy efficiency in high power applications. Solutions for solar inverters, electric vehicles, welding and medical devices will also be included.

It is said the devices’ low gate resistance will minimise switching energy loss, even at high frequencies.

According to the general manager for Microsemi’s power products, the supplier is expanding its SiC product portfolio by extending the capability of in-house fabrication.

The 1200V SiC mosfets are rated at 80 milliohms and 50 milliohms, which make them available in industry standard TO-247 and SOT-227 packages.