Element Six GaN-on-Diamond Wafers Performs Better Than Standard GaN-on-SiC in RF Devices

Compared to GaN-on-SiC devices, Raytheon had obtained a three times improvement in GaN-on-Diamond's RF areal power density when being applied on high electron mobility transistor (HEMT) devices.

The GaN-on-Diamond devices also indicated a nearly three times reduction in thermal resistance. Raytheon used several industry standard thermal measurement techniques to establish the consistency of these results.

Upon reaching these milestones, Raytheon has met the aggressive objectives, which aimed to develop GaN RF devices that exhibit three times or greater improvement in power density through improved thermal management.

GaN-on-Diamond substrates, fabricated by Element Six, exhibit a clear advantage over other substrate materials because synthetic diamond dissipates heat up to five times more effectively than silicon or silicon carbide. This dissipation advantage, coupled with the close proximity of the diamond to the GaN results in a dramatic reduction in the thermal resistance of GaN-on-Diamond wafers. Lower thermal resistance enables simpler and less expensive thermal management systems and reliable operation in higher ambient temperatures, as well as more cost-effective RF devices.

Having been designed for manufacturers of transistor-based circuits with high power, high voltage, and high frequency characteristics, Element Six's GaN-on-Diamond wafers will lead to the creation of smaller, faster, more energy efficient, and higher power electronic devices that enjoy longer lifespans and improved reliability. GaN-on-Diamond technology offers revolutionary advantages over all other available RF semiconductor materials, delivering superior system performance and cost, which makes it ideal for next generation device technology in both defense and commercial applications.