Cree’s new all-SiC half-bridge module doubles power density

Cree Inc shows that its silicon carbide (SiC) technology continueously enables a smaller, lighter, more efficient and lower-cost power systems with a new half-bridge module featured by all-SiC 300A, 1.2kV.

Packaged in a 62mm housing, which is an industry-standard actually, the new module is projected to reduce energy loss due to switching by more than five times compared to the equivalent silicon solution. This efficiency enables all-SiC high-power converters rated up to the megawatt level, which extends Cree’s SiC chip technology into high-current power modules.

The new all-SiC 62mm half-bridge module’s switching efficiency and performance allow designers to reduce the amount of magnetic and cooling elements, delivering double the power density and a lower system cost while also reducing end-user cost of ownership, claims Cree. Offering a simplified two-level topology that is feasible at higher frequencies, the new module can also eliminate the need to invest in multi-level silicon-based solutions.

CreeThe new SiC power module is available with multiple gate driver options and is pin compatible to standard 62mm half-bridge modules, including IGBT modules rated at 450A or more, allowing designers to quickly and easily evaluate the module’s capabilities.