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The Latest Purification Technology of Graphene in Nanoelectronics

According to the report, scientists from Russia, France, Sweden and Greece have developed a industrial technology to purify grapheme. This new method can make graphene more stable, and the latest findings can help to better purify graphene.

From: www.iabrasive.comDate: 2016-10-25 05:55:21Views: 413

According to the report, scientists from Russia, France, Sweden and Greece have developed a industrial technology to purify grapheme. This new method can make graphene more stable, and the latest findings can help to better purify graphene, so that people can get high quality industrial graphene with stable electrical properties.

Even if it contacts with ozone for 10 minutes, it will be "unscathed". Researchers express that the achievement is an important progress in the field of nanometer electronics technology, which will promote the development of this field.

Graphene is a kind of material that is thinner than human hair about 1 million times, composed of a monolayer of carbon atoms arranged in honeycomb structure, which has high electrical conductivity, durability, ductility, etc., and can be used for manufacturing a variety of nanoscale electronics equipment.

In the process of production, polymer coating residue will "pollute" graphene, and reduce its liquidity of internal load. Thermal annealing, plasma stripping, chemical solvent and other methods can help remove the residual polymer, but also weaken the purity of grapheme at the same time.

Among them, the most commonly used purification method is to use ozone. This method has high reactivity, but when ozone destroys the residual polymer, it also causes defects in graphene at the same time, which will lead to the weakening performance.

In view of this, Russian scientists from MEPhI use the sublimates of high temperature silicon carbide (SiC), successfully getting high stability graphene which contacts with ozone more than 10 minutes, its performance can remain unchanged; And ordinary graphene in the same environment will be changed in three to four minutes.

To further verify the test results, scientists from Greece, France and Sweden, clarify why silicon carbide – grapheme can remain "unscathed" under the action of oxygen free radicals, and become more stable through computer modeling. New graphene has unusual stability, which is obviously related with the roughness of epitaxial grapheme on silicon carbide base.

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