In The Future It Will be Possible to Use IGBT High Power Modules (IHM) from Infineon Technologies AG Even Longer

The significantly longer life time of the IHM-B Enhanced modules is based on two central modifications. First of all, a newly implemented manufacturing technology enables more robust bond wire connections. This increases the resilience of the module components in power cycling associated with switching. The power cycling behavior of the IHM-B Enhanced has improved by a factor of two compared to the previous model.

Secondly, the thermal conductivity of the IHM-B Enhanced is increased by the combination of an aluminum silicon carbide (AlSiC) base plate with aluminum nitride (AlN) substrates. Depending on the topology used, the thermal resistivity drops by 16 18 percent:For example, with a 2400 A single switch module this means an improvement from 9.3 Kelvin per kilowatt (IHM-B) to only 7.8 Kelvin per kilowatt (IHM-B Enhanced). Significantly better dissipation of heat generated during operation of the module relieves in particular components susceptible to heat, such as chips and bond wires.

"With the IHM-B Enhanced modules we are introducing a new manufacturing technology and a new substrate material. These advances have proven themselves in practical testing since the end of 2012 with challenging applications such as wind mills," saysBjörn-Christoph Schubart, responsible for IGBT High-Power Modules at Infineon. "We've created value by clearly prolonging service life with otherwise unchanged product properties and will continue to expand our excellent position in the High-Power Module sector. The high levels of product reliability and price stability are of particular benefit to our customers in growth markets such as transport, industrial drives and renewable energy."

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