Element Six's GaN-on-diamond wafers shown by Raytheon to provide three-fold boost in power density vs GaN-on-SiC for RF devices

Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its gallium nitride (GaN)-on-diamond wafers have been proven by Raytheon Company to significantly outperform industry-standard gallium nitride-on-silicon carbide (GaN-on-SiC) in RF devices — reducing thermal resistance, increasing RF power density, and preserving RF functionality.

Element Six claims that its GaN-on-diamond substrates exhibit an advantage over other substrate materials because synthetic diamond dissipates heat up to five times more effectively than silicon or silicon carbide. This, coupled with the close proximity of the diamond to the GaN, results in a dramatic reduction in the thermal resistance of GaN-on-diamond wafers. Lower thermal resistance enables simpler and less expensive thermal management systems and reliable operation in higher ambient temperatures, as well as more cost-effective RF devices.

"Heat issues account for more than 50% of all electronic failures, and limit GaN’s inherent power-density performance potential," says Adrian Wilson, director of Element Six Technologies Group. "RF and high-voltage power device manufacturers that leverage GaN-on-diamond will have access to unmatched wafer thermal conductivity, and be able to deliver rapid, efficient and cost-effective heat extraction," he adds. "As the first company to make GaN-on-diamond wafers commercially available, we look forward to collaborating with manufacturers to tap into the unique properties of synthetic diamond."

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