Development of Silicon Carbide Switching Devices

The development of silicon carbide has gotten everyone's attention. Because of many excellent characteristics of silicon carbide, it can be applied in more fields.

One of them is silicon carbide switch device that is quite great. Once using silicon carbide process, you will find that the design under the high pressure level and the performance of the device are very similar, so the level of 1700v become the attractive solution in order to avoid some disadvantages in series circuit device (larger conduction loss and more spending in chips).

In many designs of silicon carbide switching devices, JFET is seen as an attractive scheme because of its simple and solid structure. Compared with those of MOSFET, JFET is not controlled by insulation structure, but is controlled in a reverse bias PN junction. Therefore, there is no excuse in its structure, no aging and observable parameters drift, which will increase its reliability and durability, and make the device particularly applicable under high temperature conditions.

In addition, compared with silicon element, the breakdown of silicon carbide components occurs only under higher pressure situation, which benefits from its wider band gap.