The Biggest Wide-band-gap Sic Semiconductor Material Manufacturing Base in Asia

Reporters learned from China Wide-band-gap Semiconductor Industry Alliance that the key construction project in Shandong Province - SICC Material Co., Ltd. has completed its Silicon Carbide Substrate Project in Jinan. This symbolizes China has founded the biggest wide-band-gap silicon carbide semiconductor material manufacturing base in Asia.

Wide-band-gap Sic semiconductor material is the third-generation semiconductor material and is replacing conventional materials, such as Si, to become the new-generation high-end semiconductor materials. Wide-band-gap Sic semiconductor material is widely used in semiconductor electric and electronic devices, microwave devices, photoelectric devices, which is of great importance to China's industry transformation and strategic defense. However, since wide-band-gap Sic semiconductor material is confronted with huge technological and industrial bottlenecks, the development of China's semiconductor industry is restricted.

Relevant personnel from China Wide-band-gap Semiconductor Industry Alliance reveal that currently, wide-band-gap Sic semiconductor material manufacturing base built in Jinan covers an area of 80,000㎡ and possesses an annual production capacity of 350,000 pieces of silicon carbide substrates, which will facilitate the rapid growth of China's silicon carbide industry chains and form a huge Sic semiconductor industrial cluster.